[Elsevier] A robust and write bit-line free sub-threshold 12T-SRAM for ultra low power applications in 14 nm FinFET technology

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journal:Microelectronics Journal

Authors:Mehrzad Karamimanesh; Ebrahim Abiri; Kourosh Hassanli; Mohammad Reza Salehi; Abdolreza Darabi

Published date:2021-12-

DOI:10.1016/j.mejo.2021.105185

PDF link:https://www.sciencedirect.com/sc ... 026269221001919/pdf

Article link:http://dx.doi.org/10.1016/j.mejo.2021.105185

Article Source:Elsevier BV


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