[IEEE] 13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate

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journal:2024 IEEE International Solid-State Circuits Conference (ISSCC)

Authors:Wontaeck Jung; Hyunggon Kim; Do-Bin Kim; Tae-Hyun Kim; Namhee Lee; Dongjin Shin; Minyoung Kim; Youngsik Rho; Hun-Jong Lee; Yujin Hyun; Jaeyoung Park; Taekyung Kim; Hwiwon Kim; Gyeongwon Lee; Jisang Lee; Joonsuc Jang; Jungmin Park; Sion Kim; Su Chang Jeon; Suyong Kim; Jung-Ho Song; Min-Seok Kim; Taesung Lee; Byung-Kwan Chun; Tongsung Kim; Young Gyu Lee; Hokil Lee; Soowoong Lee; Hwaseok Lee; Dooho Cho; Sang-Wan Nam; Yeomyung Kim; Kunyong Yoon; Yoonjae Lee; Sunghoon Kim; Jungseok Hwang; Raehyun Song; Hyunsik Jang; Jaeick Son; Hongsoo Jeon; Myunghun Lee; Mookyung Lee; Kisung Kim; Eungsuk Lee; Myeongwoo Lee; Sungkyu Jo; Chan Ho Kim; Jong Chul Park; Kyunghwa Yun; Soonock Seol; Ji-Ho Cho; Seungjae Lee; Jin-Yub Lee; Sung-Hoi Hur

Published date:2024-2-18

DOI:10.1109/isscc49657.2024.10454343

PDF link:https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=10454343

Article link:http://dx.doi.org/10.1109/isscc49657.2024.10454343

Article Source:IEEE


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