[Other] (Invited) Recent Progress in 4H-SiC CVD Growth for High-Voltage Power Devices

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journal：ECS Meeting Abstracts

Authors：Hidekazu Tsuchida; Isaho Kamata; Norihiro Hoshino; Koichi Murata; Tetsuya Miyazawa

Published date：2019-9-1

DOI：10.1149/ma2019-02/31/1353

PDF link：https://iopscience.iop.org/article/10.1149/MA2019-02/31/1353

Article link：http://dx.doi.org/10.1149/ma2019-02/31/1353

Article Source：The Electrochemical Society。

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[Other] (Invited) Recent Progress in 4H-SiC CVD Growth for High-Voltage Power Devices Copy