A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode with Normally-off Operation, High Mobility and Reliability for 3D Integrated Devices

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journal：2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Authors：Kaito Hikake; Zhuo Li; Junxiang Hao; Chitra Pandy; Takuya Saraya; Toshiro Hiramoto; Takanori Takahashi; Mutsunori Uenuma; Yukiharu Uraoka; Masaharu Kobayashi

Published date：2023-6-11

DOI：10.23919/vlsitechnologyandcir57934.2023.10185234

PDF link：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=10185234

Article link：http://dx.doi.org/10.23919/vlsit ... 57934.2023.10185234

Article Source：IEEE。

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[IEEE] A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode with Normally-off Operation, High Mobility and Reliability for 3D Integrated Devices

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[IEEE] A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode with Normally-off Operation, High Mobility and Reliability for 3D Integrated Devices