[IEEE] A Six Level Gate-Driver Topology with 2.5 ns Resolution for Silicon Carbide MOSFET Active Gate Drive Development

NCP Post time 2024-6-21 01:56:23 | Show all posts |Read mode
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journal:2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia)

Authors:Paul D. Judge; Ross Mathieson; Stephen Finney

Published date:2021-5-24

DOI:10.1109/ecce-asia49820.2021.9479081

PDF link:https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=9479081

Article link:http://dx.doi.org/10.1109/ecce-asia49820.2021.9479081

Article Source:IEEE


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