P-GaN/p-AlGaN/AlGaN/GaN Heterojunction Field-Effect Transistor With a Threshold Voltage of 6 V

Post time 2024-6-16 15:00:30

journal：IEEE Electron Device Letters

Authors：Dong-Guk Kim; Jun-Hyeok Yim; Min-Keun Lee; Myeong-Su Chae; Hyungtak Kim; Ho-Young Cha

Published date：2024-6-

DOI：10.1109/led.2024.3391619

PDF link：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=10505303

Article link：http://dx.doi.org/10.1109/led.2024.3391619

Article Source：Institute of Electrical and Electronics Engineers (IEEE)。

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Post time 2024-6-16 15:00:31

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[IEEE] P-GaN/p-AlGaN/AlGaN/GaN Heterojunction Field-Effect Transistor With a Threshold Voltage of 6 V

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[IEEE] P-GaN/p-AlGaN/AlGaN/GaN Heterojunction Field-Effect Transistor With a Threshold Voltage of 6 V