TCAD Simulation of the Effect of Buffer Layer Parameters on Single Event Burn-Out in p-GaN Gate HEMTs

Post time 2024-6-16 15:00:20

journal：IEEE Transactions on Electron Devices

Authors：Ga Zhang; Shenglei Zhao; Zhizhe Wang; Xiufeng Song; Shuang Liu; Xuejing Sun; Longyang Yu; Shuzhen You; Zhihong Liu; Yue Hao; Jincheng Zhang

Published date：2024--

DOI：10.1109/ted.2024.3403085

PDF link：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=10539987

Article link：http://dx.doi.org/10.1109/ted.2024.3403085

Article Source：Institute of Electrical and Electronics Engineers (IEEE)。

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Post time 2024-6-16 15:00:21

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[IEEE] TCAD Simulation of the Effect of Buffer Layer Parameters on Single Event Burn-Out in p-GaN Gate HEMTs