A Novel Program Scheme to Optimize Program Disturbance in Dual-Deck 3D NAND Flash Memory

Post time 2024-5-13 19:45:44

journal：IEEE Electron Device Letters

Authors：Xinlei Jia; Lei Jin; Jianquan Jia; Kaikai You; Kaiwei Li; Shan Li; Yali Song; Yuanyuan Min; Ying Cui; Wenzhe Wei; Xiangnan Zhao; Weiming Chen; Hongtao Liu; An Zhang; Zongliang Huo

Published date：2022-7-

DOI：10.1109/led.2022.3178155

PDF link：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=9782870

Article link：http://dx.doi.org/10.1109/led.2022.3178155

Article Source：Institute of Electrical and Electronics Engineers (IEEE)。

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Post time 2024-5-13 19:45:45

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[IEEE] A Novel Program Scheme to Optimize Program Disturbance in Dual-Deck 3D NAND Flash Memory

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