Characterization and fabrication of indium doped LaPO4 as an interfacial layer of Cu/In–LaPO4/n–Si and developed for Schottky barrier diode

Post time 2024-1-8 16:13:45

journal：Journal of Materials Science: Materials in Electronics

Authors：R. Priya; R. Mariappan; J. Chandrasekaran; V. Balasubramani

Published date：2023-2-

DOI：10.1007/s10854-023-09858-x

PDF link：https://link.springer.com/conten ... 854-023-09858-x.pdf

Article link：http://dx.doi.org/10.1007/s10854-023-09858-x

Article Source：Springer Science and Business Media LLC。

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Characterization and fabrication of indium doped LaPO4 as an interfacial layer of Cu/In–LaPO4/n–Si and developed for Schottky barrier diode

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Characterization and fabrication of indium doped LaPO4 as an interfacial layer of Cu/In–LaPO4/n–Si and developed for Schottky barrier diode