[SPIE] Dislocation density reduction in (101 1 ) GaN at a high temperature using tri-halide vapor phase epitaxy

jizong Post time 2022-5-25 14:28:36 | Show all posts |Read mode
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journal:Gallium Nitride Materials and Devices XV

Authors:Kenji Iso; Shoma Ohtaki; Erina Miyata; Yuka Kido; Hisashi Murakami; Akinori Koukitu

Published date:2020-2-16

DOI:10.1117/12.2543661

Article link:http://dx.doi.org/10.1117/12.2543661

Article Source:SPIE


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