Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture

Post time 2024-6-16 15:00:07

journal：IEEE Transactions on Electron Devices

Authors：C. Leurquin; W. Vandendaele; M.-A. Jaud; R. Lavieville; B. Mohamad; C. Masante; G. Despesse; E. Nowak

Published date：2024-5-

DOI：10.1109/ted.2024.3384941

PDF link：https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=10505816

Article link：http://dx.doi.org/10.1109/ted.2024.3384941

Article Source：Institute of Electrical and Electronics Engineers (IEEE)。

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Post time 2024-6-16 15:00:08

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