[IEEE] NiO Junction Termination Extension for Ga2O3 Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed

momo19 Post time 2024-6-14 14:28:54 | Show all posts |Read mode
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journal:2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Authors:Ming Xiao; Boyan Wang; Ruizhe Zhang; Qihao Song; Joseph Spencer; Zhonghao Du; Yuan Qin; Kohei Sasaki; Han Wang; Marko Tadjer; Yuhao Zhang

Published date:2023-5-28

DOI:10.1109/ispsd57135.2023.10147704

PDF link:https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=10147704

Article link:http://dx.doi.org/10.1109/ispsd57135.2023.10147704

Article Source:IEEE


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